The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Sep. 28, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Er-Xuan Ping, Hefei, CN;

Zhen Zhou, Hefei, CN;

Lingguo Zhang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/485 (2023.02); H10B 12/482 (2023.02);
Abstract

A method for manufacturing a memory includes: providing a substrate and multiple discrete pseudo bit line contact layers, a plurality of active areas being provided in the substrate, and each bit line contact layer being electrically connected to the active areas; forming pseudo bit line structures at tops of the pseudo bit line contact layers; forming sacrificial layers that fill regions between the adjacent pseudo bit line structures and are located on side walls of the pseudo bit line structures and the pseudo bit line contact layers; after forming the sacrificial layers, removing the pseudo bit line structures to form through holes exposing the pseudo bit line contact layers; removing the pseudo bit line contact layers to form through holes in the substrate; and forming bit line contact layers that fill the through holes in the substrate and are electrically connected to the active areas.


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