The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Nov. 18, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Ran Li, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Embodiments of the present application provide a memory and a method for forming the memory. The method includes: providing a substrate, and forming a bit line structure on the substrate and a first protective layer; forming a dielectric layer with which a gap between the adjacent bit line structures is filled; forming a second protective layer to cover a top surface of the first protective layer and a top surface of the dielectric layer; removing part of the dielectric layer and part of the second protective layer to form a capacitor contact hole, and exposing the first protective layer between two adjacent ones of the capacitor contact holes; forming a conductive layer with which the capacitor contact hole is filled and the top surface of the exposed first protective layer is covered, and etching part of the conductive layer to form a separate capacitor contact structure.