The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Sep. 22, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Ching Wu, Tainan, TW;
Po-Jen Wang, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The substrate has a first conductivity. The first region having the first conductivity is formed in the substrate. The second region having a second conductivity is formed in the substrate and is adjacent to the first region. The source region with the second conductivity is formed in the first region. The drain region with the second conductivity is formed in the second region. The active gate stack is disposed on the first region. The dummy gate stack is disposed on the second region, and the dummy gate stack is electrically coupled to a variable voltage.