The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Aug. 17, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Wei Huang, Hefei, CN;
Xiaodong Luo, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for manufacturing a semiconductor device, including: acquiring a substrate, wherein a gate structure is formed on the substrate; implanting first ions into the substrate to form pre-amorphized regions at two sides of the gate structure respectively; implanting second ions into the pre-amorphized regions to form amorphized regions in the pre-amorphized regions respectively; forming first sidewalls each at a respective one of the two sides of the gate structure; performing a second doping process to form first doped regions in the amorphized regions; forming second sidewalls each at a side of a respective first sidewall; and forming a heavily-doped source region and a heavily-doped drain region in the first doped regions respectively.