The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Dec. 14, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Takeshi Suwa, Kawasaki Kanagawa, JP;

Tomoko Matsudai, Tokyo, JP;

Yoko Iwakaji, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/7397 (2013.01);
Abstract

A semiconductor device includes a semiconductor part, a first electrode at a back surface of the semiconductor part; a second electrode at a front surface of the semiconductor part; third and fourth electrodes provided between the semiconductor part and the second electrode. The third and fourth electrodes are arranged in a first direction along the front surface of the semiconductor part. The third electrode is electrically insulated from the semiconductor part by a first insulating film. The third electrode is electrically insulated from the second electrode by a second insulating film. The fourth electrode is electrically insulated from the semiconductor part by a third insulating film. The fourth electrode is electrically isolated from the third electrode. the third and fourth electrodes extend into the semiconductor part. The fourth electrode includes a material having a larger thermal conductivity than a thermal conductivity of a material of the third electrode.


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