The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
May. 27, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Yun-Yuan Wang, Kaohsiung, TW;
Chih-Hsiang Hsiao, Taoyuan, TW;
I-Chih Ni, New Taipei, TW;
Chih-I Wu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A device includes a substrate, a channel layer, a barrier layer, a gate electrode, and source/drain contacts. The channel layer is made of transition metal dichalcogenide. The barrier layer is over the channel layer. The gate electrode is over the barrier layer. The source/drain contacts are on opposite sides of the gate electrode and over the barrier layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile