The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Feb. 26, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Wei Ju Lee, Hsinchu, TW;

Chun-Fu Cheng, Hsinchu County, TW;

Chung-Wei Wu, Hsin-Chu County, TW;

Zhiqiang Wu, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/02532 (2013.01); H01L 21/02609 (2013.01); H01L 29/42392 (2013.01); H01L 29/456 (2013.01); H01L 29/78696 (2013.01);
Abstract

In one example aspect, the present disclosure is directed to a device. The device includes an active region on a semiconductor substrate. The active region extends along a first direction. The device also includes a gate structure on the active region. The gate structure extends along a second direction that is perpendicular to the first direction. Moreover, the gate structure engages with a channel on the active region. The device further includes a source/drain feature on the active region and connected to the channel. A projection of the source/drain feature onto the semiconductor substrate resembles a hexagon.


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