The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jun. 08, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yong-Yan Lu, Hsinchu, TW;

Chia-Wei Soong, Taoyuan, TW;

Hou-Yu Chen, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/225 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0921 (2013.01); H01L 21/2255 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/1054 (2013.01); H01L 29/1083 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 29/785 (2013.01); H01L 29/7849 (2013.01);
Abstract

A semiconductor device includes a silicon substrate; a semiconductor fin over the silicon substrate; and an isolation structure over the silicon substrate. The semiconductor fin includes a first portion and a second portion over the first portion. The first portion is surrounded by the isolation structure, and the second portion protrudes above the isolation structure. The second portion has a different crystalline lattice constant than the first portion. The first portion includes a first dopant, and the second portion is substantially free of the first dopant. The semiconductor device further includes a gate structure above the isolation structure and engaging multiple surfaces of the second portion.


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