The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jan. 07, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/87 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0921 (2013.01); H01L 21/823871 (2013.01); H01L 27/0262 (2013.01); H01L 29/0649 (2013.01); H01L 29/1083 (2013.01); H01L 29/87 (2013.01);
Abstract
A method includes the following operations: disconnecting at least one of drain regions that are formed on a first active area, of first transistors, from a first voltage; and disconnecting at least one of drain regions that are formed on a second active area, of second transistors coupled to the first transistors from a second voltage. The at least one of drain regions of the second transistors corresponds to the at least one of drain regions of the first transistors.