The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Feb. 08, 2022
Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistor
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Ji-Cheng Chen, Hsinchu, TW;
Ching-Hwanq Su, Tainan, TW;
Kuan-Ting Liu, Hsinchu, TW;
Shih-Hang Chiu, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/51 (2006.01); H01L 21/3105 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/28088 (2013.01); H01L 21/28556 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/42372 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/66545 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/31053 (2013.01); H01L 29/517 (2013.01); H01L 29/7848 (2013.01);
Abstract
A gate structure includes a gate dielectric layer, a work function layer, a metal layer, and a barrier layer. The work function layer is surrounded by the gate dielectric layer. The metal layer is disposed over the work function layer. The barrier layer is surrounded by the work function layer and surrounds the metal layer. The barrier layer includes fluorine and silicon, or fluorine and aluminum. The barrier layer is a tri-layered structure.