The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Dec. 30, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Benjamin Stassen Cook, Santa Clara, CA (US);
Nazila Dadvand, Santa Clara, CA (US);
Archana Venugopal, Mountain View, CA (US);
Daniel Lee Revier, Garland, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/532 (2006.01); H01L 21/683 (2006.01); H01L 21/3205 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/373 (2013.01); H01L 21/32051 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 23/53209 (2013.01);
Abstract
In described examples, a semiconductor wafer with a thermally conductive surface layer comprises a bulk semiconductor layer having a first surface and a second surface, circuitry on the first surface, a metallic layer attached to the first surface or the second surface, and a graphene layer attached to the metallic layer. The first surface opposes the second surface. The metallic layer comprises a transition metal.