The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Dec. 03, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Chiyu Zhu, Helsinki, FI;

Shinya Iwashita, Helsinki, FI;

Jan Willem Maes, Wilrijk, BE;

Jiyeon Kim, Tempe, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/67 (2006.01); C23C 16/46 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); C23C 16/06 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76876 (2013.01); C23C 16/06 (2013.01); C23C 16/34 (2013.01); C23C 16/45546 (2013.01); C23C 16/463 (2013.01); C23C 16/52 (2013.01); H01L 21/67167 (2013.01); H01L 21/76864 (2013.01);
Abstract

Systems and methods are described for depositing a TiN liner layer and a cobalt seed layer on a semiconductor wafer in a cobalt metallization process. In some embodiments the wafer is cooled after deposition of the TiN liner layer and/or the cobalt seed layer. In some embodiments the TiN liner layer and cobalt seed layer are deposited in process modules that are part of a semiconductor processing apparatus that also includes one or more modules for cooling the substrate. In some embodiments the cobalt seed layer may comprise a mixture of TiN and cobalt, a nanolaminate of TiN and cobalt layers or a graded TiN/Co layer.


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