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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11854808 B1

PDFFull Text
Date of Patent:
Dec. 26, 2023

Filed:

Aug. 30, 2021

Photo mask and lithography method using the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Bao-Chin Li, Tainan, TW;

Chung-Kai Huang, Tainan, TW;

Ko-Pin Kao, Taichung, TW;

Ching-Yen Hsaio, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Nicholas J Tobergte

Assistant Examiner:

Kevin undefined Quinto

Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/28 (2006.01); H10B 41/35 (2023.01); H10B 41/43 (2023.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0274 (2013.01); H01L 29/40114 (2019.08); H10B 41/35 (2023.02); H10B 41/43 (2023.02);
Abstract

A photo mask includes a plurality of device features, a first assist feature, and a second assist feature. The device features are in a patterning region of a device region. The first assist feature are in the patterning region and adjacent to the device features. The first assist feature is for correcting an optical proximity effect in a photolithography process. The second assist feature is in a non-patterning region of the device region. The second assist feature is a sub-resolution correction feature, and a first distance between the second assist feature and one of the device features closest to the second assist feature is greater than a second distance between adjacent two of the device features.

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Li, Bao-Chin. (2023). Photo mask and lithography method using the same (U.S. Patent No. 11854808). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11854808

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