The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Apr. 03, 2020
Suzhou Institute of Nano-tech and Nano-bionics (Sinano), Chinese Academy of Sciences, Suzhou, CN;
Abstract
The present invention discloses a super-flexible transparent semiconductor film and a preparation method thereof, the method includes: providing an epitaxial substrate; growing a sacrificial layer on the epitaxial substrate; stacking and growing at least one layer of AlGaN epitaxial layer on the sacrificial layer, wherein 0<n≤1; growing a nanopillar array containing GaN materials on the AlGaN epitaxial layer; etching the sacrificial layer so as to peel off an epitaxial structure on the sacrificial layer as a whole; and transferring the epitaxial structure after peeling onto a surface of the flexible transparent substrate. Compared to traditional planar films, the present invention can not only improve the crystal quality by releasing stress, but also improve flexibility and transparency through characteristics of the nanopillar materials. In addition, a total thickness of the buffer layer and the sacrificial layer required by the epitaxial structure can be small, and there is no need for additional catalyst during an epitaxial growth process, which is beneficial for reducing epitaxial costs and process difficulty. The present invention is practical in use, and can provide technical support for invisible semiconductor devices and super-flexible devices.