The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Aug. 07, 2023
Applicant:

Monolithic 3d Inc., Klamath Falls, OR (US);

Inventors:

Zvi Or-Bach, Haifa, IL;

Jin-Woo Han, San Jose, CA (US);

Eli Lusky, Ramat-Gan, IL;

Assignee:

Monolithic 3D Inc., Klamath Falls, OR (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H01L 29/49 (2006.01); H10B 41/27 (2023.01); G11C 16/04 (2006.01); H10B 41/35 (2023.01); H10B 41/10 (2023.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); G11C 16/0483 (2013.01); H01L 29/495 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A 3D memory device including: a plurality of memory cells, where each memory cell of the plurality of memory cells includes at least one memory transistor, where each of the at least one memory transistor includes a source, a drain, and a channel; and a plurality of bit-line pillars, where each bit-line pillar of the plurality of bit-line pillars is directly connected to a plurality of the source or the drain, where the plurality of bit-line pillars are vertically oriented, where the channel is horizontally oriented, where each of the at least one memory transistor is directly connected to at least one of the plurality of bit-line pillars, where the plurality of memory cells include a partially or fully metalized source structure and/or a partially or fully metalized drain structure, where the metalized source includes two metal structures, and where the two metal structures include a tungsten structure.


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