The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Aug. 27, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Rumin Ji, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); G11C 17/18 (2006.01); G11C 17/16 (2006.01); G11C 11/4074 (2006.01); G11C 11/408 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01); G11C 17/16 (2013.01);
Abstract

A state detection circuit of an anti-fuse memory cell includes a first switching element, having a first end connected to a power supply, a second end connected to a first node, and a control end connected to a controller; an anti-fuse memory cell array including a plurality of anti-fuse memory cell sub-arrays, bit lines of the plurality of anti-fuse memory cell sub-arrays being all connected to the first node, and word lines of the plurality of anti-fuse memory cell sub-arrays being all connected to the controller; and a comparator, having a first input end connected to the first node, and a second input end connected to a reference voltage.


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