The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Jan. 26, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Taeksang Song, San Jose, CA (US);

Saira Samar Malik, Lafayette, IN (US);

Chinnakrishnan Ballapuram, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/0625 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01);
Abstract

Methods, systems, and devices for power mode control in a multi-memory device are described. An apparatus may include a non-volatile memory and a volatile memory. The apparatus may operate the volatile memory in a first power mode and the non-volatile memory in a second power mode. The apparatus may transition the volatile memory from the first power mode to a third power mode based on a power mode command from a host device. The apparatus may transition the non-volatile memory from the second power mode to a fourth power mode that consumes less power than the second power mode irrespective of the command from the host device and based on a quantity of queued commands for the non-volatile memory being less than a threshold quantity.


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