The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Jan. 12, 2022
United Microelectronics Corp., Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating memory cell of magnetoresistive RAM includes forming a memory stack structure on a first electrode layer. The memory stack structure includes a SAF layer to serve as a pinned layer; a magnetic free layer and a barrier layer sandwiched between the SAF layer and the magnetic free layer. A second electrode layer is then formed on the memory stack structure. The SAF layer includes a first magnetic layer, a second magnetic layer, and a spacer layer of a first metal element sandwiched between the first magnetic layer and the second magnetic layer. The first metal element is phase separated from a second metal element of the first and second magnetic layers, and the second metal element of the first magnetic layer and the second magnetic layer interfaces with the spacer layer.