The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Mar. 09, 2021
Applicant:

Ningbo Semiconductor International Corporation, Ningbo, CN;

Inventors:

Huan Sui, Ningbo, CN;

Fei Qi, Ningbo, CN;

Guohuang Yang, Ningbo, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/17 (2006.01); H03H 9/02 (2006.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02125 (2013.01); H03H 3/02 (2013.01); H03H 9/173 (2013.01); H03H 2003/021 (2013.01);
Abstract

The present disclosure provides a film bulk acoustic resonator and its fabrication method. The film bulk acoustic resonator includes a first substrate, a first support layer containing a first cavity, a piezoelectric stacked layer, and a first separation structure and/or a second separation structure. The piezoelectric stacked layer includes an effective working region and a parasitic working region; and in the parasitic working region, a first electrode and a second electrode have a corresponding region along a thickness direction. The first separation structure separates the first electrode, and the first electrode of a portion of the parasitic working region is insulated from the first electrode of the effective working region; and the second separation structure separates the second electrode, and the second electrode of a portion of the parasitic working region is insulated from the second electrode of the effective working region.


Find Patent Forward Citations

Loading…