The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
May. 21, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Bo-Wen Hsieh, Miaoli County, TW;
Wen-Hsin Chan, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device is provided. The method includes etching a dummy gate to form a gate trench to expose a channel portion of a first fin and a first isolation structure; depositing a gate dielectric layer and first and second work function layers, wherein the second work function layer has a first portion directly over the channel portion of the first fin and a second portion directly over the first isolation structure; etching the second portion of the second work function layer, wherein the first portion of the second work function layer remains; depositing a third work function layer over and in contact with the first portion of the second work function layer and the first work function layer; and filling the gate trench with a gate metal.