Semiconductor structure and manufacturing method therefor

Abstract

A semiconductor structure and a manufacturing method therefor are provided by embodiments of the present application. A buffer layer is disposed on a substrate layer, and the buffer layer includes a first buffer layer and a second buffer layer. By doping a transition metal in the first buffer layer, a deep level trap may be formed to capture background electrons, and diffusion of free electrons toward the substrate may also be avoided. In the second buffer layer, by decreasing a doping concentration of the transition metal or not doping intentionally the transition metal, a tailing effect is avoided and current collapse is prevented. By doping periodically C in the buffer layer, C may be as an acceptor impurity to compensate the background electrons, and then a concentration of the background electrons is reduced.