The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Nov. 30, 2021
Micron Technology, Inc., Boise, ID (US);
Ahmed Nayaz Noemaun, Boise, ID (US);
Chandra S. Danana, Boise, ID (US);
Durga P. Panda, Boise, ID (US);
Luca Laurin, Lissone, IT;
Michael J. Irwin, Boise, ID (US);
Rekha Chithra Thomas, Hyderabad, IN;
Sara Vigano, Monza, IT;
Stephen W. Russell, Boise, ID (US);
Zia A. Shafi, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for memory device decoder configurations are described. A memory device may include an array of memory cells and decoder circuits. The array may include one or more memory cells coupled with an access line, and a decoder circuit may be configured to bias the access line to one or more voltages. The decoder circuit may include a first transistor coupled with the access line and a second transistor coupled with the access line. The first transistor may be a planar transistor having a first gate electrode formed on a substrate, and the second transistor may be a trench transistor having a second gate electrode that extends into a cavity of the substrate, where a length of a first gate electrode may be greater than a length of the second gate electrode.