The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Dec. 22, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Fu Lee, Hsinchu, TW;

Yu-Der Chih, Hsinchu, TW;

Hon-Jarn Lin, New Taipei, TW;

Yi-Chun Shih, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 7/06 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 7/062 (2013.01); G11C 7/22 (2013.01); G11C 11/161 (2013.01); G11C 13/004 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0057 (2013.01); G11C 2207/063 (2013.01);
Abstract

A device includes first and second reference storage units, and first and second reference switches. The first reference switch outputs a first current at a first terminal thereof to the first reference storage unit. The first reference storage unit receives the first current at a first terminal thereof and generates a first signal, according to the first current, at a second terminal thereof to an average current circuit. The second reference switch outputs a second current at a first terminal thereof to the second reference storage unit. The second reference storage unit receives the second current at a first terminal thereof, and generates a second signal, according to the second current, at a second terminal thereof to the average current circuit. The first and second reference switches are coupled to a plurality of first memory cells by a first word line.


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