The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Jul. 10, 2019
Hitachi High-tech Corporation, Tokyo, JP;
Eri Takahashi, Tokyo, JP;
Shin Imamura, Tokyo, JP;
Makoto Suzuki, Tokyo, JP;
Shunsuke Mizutani, Tokyo, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
The purpose of the present invention is to provide a scintillator for a charged particle beam device and a charged particle beam device which achieve both an increase in emission intensity and a reduction in afterglow intensity. This scintillator for a charged particle beam device is characterized by comprising a substrate (), a buffer layer () formed on a surface of the substrate (), a stack () of a light emitting layer () and a barrier layer () formed on a surface of the buffer layer (), and a conductive layer () formed on a surface of the stack () and by being configured such that the light emitting layer () contains InGaN, the barrier layer () contains GaN, and the ratio b/a of the thickness b of the barrier layer () to the thickness a of the light emitting layer () is 11 to 25.