The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 19, 2023

Filed:

Jul. 31, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

David Gunther, Santa Clara, CA (US);

Jiao Song, Singapore, SG;

Kirankumar Neelasandra Savandaiah, Bangalore, IN;

Irena H. Wysok, San Jose, CA (US);

Anthony Chih-Tung Chan, Sunnyvale, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/16 (2006.01); C23C 14/56 (2006.01); H01L 21/768 (2006.01); C23C 14/50 (2006.01); C23C 14/35 (2006.01);
U.S. Cl.
CPC ...
C23C 14/165 (2013.01); C23C 14/351 (2013.01); C23C 14/50 (2013.01); C23C 14/56 (2013.01); H01J 37/3455 (2013.01); H01J 37/3458 (2013.01); H01L 21/76898 (2013.01); H01J 37/3405 (2013.01);
Abstract

An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.


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