logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11843061 B1

PDFFull Text
Date of Patent:
Dec. 12, 2023

Filed:

Aug. 27, 2020

Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices

Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Kijeong Han, Apex, NC (US);

Joohyung Kim, Cary, NC (US);

Sei-Hyung Ryu, Cary, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Moin M Rahman

Int. Cl.
CPC ...
H01L 29/808 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/808 (2013.01); H01L 29/1608 (2013.01); H01L 29/66893 (2013.01);
Abstract

A power semiconductor device has a semiconductor layer structure that includes a silicon carbide drift region having a first conductivity type, first and second wells in the silicon carbide drift region that are doped with dopants having a second conductivity type, and a JFET region between the first and second wells. The first and second wells each include a main well and a side well that is between the main well and the JFET region, and each side well includes a respective channel region. A doping concentration of the JFET region exceeds a doping concentration of the silicon carbide drift region, and a minimum width of an upper portion of the JFET region is greater than a minimum width of a lower portion of the JFET region.

Find Patent Forward Citations

Quick Actions:

Han, Kijeong. (2023). Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices (U.S. Patent No. 11843061). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11843061

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…