The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Jul. 16, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Neil Quinn Murray, Hsinchu, TW;

Katherine H. Chiang, New Taipei, TW;

Chung-Te Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 27/1255 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure may include a transistor structure, the transistor structure may include a gate region arranged over an upper surface of a substrate and extending substantially in a first direction that is perpendicular to the upper surface of the substrate; a first source/drain region over the upper surface of the substrate; a second source/drain region over the upper surface of the substrate; and a channel region vertically extending in the first direction between the first source/drain region and the second source/drain region, wherein the channel region comprises an oxide semiconductor material. Along the first direction, the gate region covers a sidewall of the channel region.


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