The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Oct. 08, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kamal M. Karda, Boise, ID (US);

Kirk D. Prall, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H10B 12/00 (2023.01); G11C 11/409 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); G11C 11/409 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H10B 12/05 (2023.02); H10B 12/30 (2023.02); H10B 12/50 (2023.02);
Abstract

A transistor comprising threshold voltage control gates. The transistor also comprises active control gates adjacent opposing first sides of a channel region, the threshold voltage control gates adjacent opposing second sides of the channel region, and a dielectric region between the threshold voltage control gates and the channel region and between the active control gates and the channel region. A semiconductor device comprising memory cells comprising the transistor is also disclosed, as are systems comprising the memory cells, methods of forming the semiconductor device, and methods of operating a semiconductor device.


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