The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Oct. 07, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Dukhyun Choe, Suwon-si, KR;
Jinseong Heo, Seoul, KR;
Yunseong Lee, Osan-si, KR;
Sanghyun Jo, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H10K 10/46 (2023.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 29/4908 (2013.01); H01L 29/513 (2013.01); H01L 29/6684 (2013.01); H01L 29/7833 (2013.01); H01L 29/78391 (2014.09); H10K 10/474 (2023.02); H01L 29/516 (2013.01);
Abstract
Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a channel layer at least one of on or in the substrate, an insulation layer on the substrate, a ferroelectric layer on the insulation layer, a fixed charge layer on an interface between the insulation layer and the ferroelectric layer, the fixed charge layer including charges of a first polarity, and a gate on the ferroelectric layer.