The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Nov. 20, 2019
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Hui Zang, San Jose, CA (US);

Cunyu Yang, Los Gatos, CA (US);

Gang Chen, San Jose, CA (US);

Assignee:

Omni Vision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14645 (2013.01); H01L 27/14603 (2013.01); H01L 27/14683 (2013.01);
Abstract

A pixel includes a semiconductor substrate, a low-κ dielectric, and a photodiode region in the semiconductor substrate. The semiconductor substrate has a substrate top surface that forms a trench. The trench extends into the semiconductor substrate and has a trench depth relative to a planar region of the substrate top surface surrounding the trench. The low-κ dielectric is in the trench between the trench depth and a low-κ depth with respect to the planar region. The low-κ depth is less than the trench depth. The photodiode region is in the semiconductor substrate and includes (i) a bottom photodiode section beneath the trench and (ii) a top photodiode section adjacent to the trench. The top photodiode section begins at a photodiode depth, with respect to the planar region, that is less than the low-κ depth, and extends toward and adjoining the bottom photodiode section.


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