The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
Nov. 18, 2021
Ap Memory Technology Corporation, Hsinchu County, TW;
Wenliang Chen, Hsinchu County, TW;
Girish Nanjappa, Hsinchu County, TW;
Lin Ma, Hsinchu County, TW;
Hung-Piao Ma, Hsinchu County, TW;
Keng Lone Wong, Hsinchu County, TW;
Chun Yi Lin, Hsinchu County, TW;
AP MEMORY TECHNOLOGY CORPORATION, Hsinchu County, TW;
Abstract
An interface of a memory circuit includes a chip enable terminal, at least one data terminal, and a data strobe terminal. The chip enable terminal receives a chip enable signal that varies between a first high voltage and a low voltage for enabling the memory circuit. The at least one data terminal receives at least one first data signal that varies between a second high voltage and the low voltage. The data strobe terminal receives a first data strobe signal that periodically varies between the second high voltage and the low voltage. The first data strobe signal is synchronized with the at least one first data signal, and is arranged to latch and sample the at least one first data signal. The first high voltage is higher than the second high voltage, and the second high voltage is higher than the low voltage.