The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Mar. 07, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Masafumi Takahashi, Nirasaki, JP;

Kenji Suzuki, Nirasaki, JP;

Tsuyoshi Takahashi, Nirasaki, JP;

Masaki Sano, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23C 16/455 (2006.01); C23C 16/14 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0272 (2013.01); C23C 16/14 (2013.01); C23C 16/45527 (2013.01);
Abstract

A method includes: forming a titanium nitride base film containing silicon by alternately repeating: precipitation of titanium nitride by alternately and repeatedly supplying a titanium-containing gas, and supplying a nitriding gas to a substrate on which a recess is formed; and precipitation of silicon nitride by alternately and repeatedly supplying a silicon-containing gas, and supplying a nitriding gas to the substrate; and subsequently, forming a tungsten film so as to bury tungsten in the recess in which the titanium nitride base film is formed, by alternately and repeatedly supplying a raw material gas containing a tungsten raw material and a reaction gas reacting with the raw material gas, to the substrate. A supply flow rate of the silicon-containing gas is adjusted so that a content of the silicon in the titanium nitride base film is high on an opening side rather than on an inner side of the recess.


Find Patent Forward Citations

Takahashi, Masafumi. (2023). Method of forming tungsten film and system therefor (U.S. Patent No. 11840759). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11840759

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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