The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Feb. 25, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chern-Yow Hsu, Hsin-Chu County, TW;
Shih-Chang Liu, Kaohsiung County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure including a first electrode via, a first electrode on the first electrode via, a magnetic tunneling junction (MTJ) over the first electrode, a second electrode over the MTJ, a first dielectric layer on the first electrode via, a second dielectric layer on the first dielectric layer. The first dielectric layer is a planar layer. A sidewall of the MTJ is in contact with the second dielectric layer, and a bottom surface of the second dielectric layer is higher than a bottom surface of the first electrode.