The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Sep. 14, 2022
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Yusheng Bian, Ballston Lake, NY (US);
Roderick A. Augur, Saratoga Springs, NY (US);
Michal Rakowski, Ballston Spa, NY (US);
Kenneth J. Giewont, Hopewell Junction, NY (US);
Karen A. Nummy, Newburgh, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/20 (2006.01); H01S 5/30 (2006.01); H01S 5/223 (2006.01); H01S 5/026 (2006.01); H01S 5/323 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2018 (2013.01); H01S 5/20 (2013.01); H01S 5/2231 (2013.01); H01S 5/2232 (2013.01); H01S 5/3013 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/3054 (2013.01); H01S 5/32333 (2013.01);
Abstract
A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.