The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

Oct. 08, 2021
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Roderick Alan Augur, Saratoga Springs, NY (US);

Yusheng Bian, Ballston Lake, NY (US);

Robert John Fox, III, Greenfield Center, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/552 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 23/5226 (2013.01); H01L 23/552 (2013.01);
Abstract

A photonic integrated circuit (PIC) die includes a silicon nitride optical component over an active region. Multiple interconnect layers are over the silicon nitride optical component, each of the multiple interconnect layers including a metal interconnect therein. At least one optical deflector is over the multiple interconnect layers and over the silicon nitride optical component. The optical deflector(s) may also include a contact passing therethrough to the interconnect layers, but do not include any other electrical interconnects. Each optical deflector may deflect light within an ambient light range of less than 570 nanometers (nm) to protect the silicon nitride optical component from light-induced degradation.


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