The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

Sep. 08, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Jun Ogawa, Yamanashi, JP;

Takayuki Karakawa, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/458 (2006.01); C23C 16/455 (2006.01); C23C 16/511 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/345 (2013.01); C23C 16/4584 (2013.01); C23C 16/45538 (2013.01); C23C 16/45553 (2013.01); C23C 16/511 (2013.01); H01J 37/3244 (2013.01); H01L 21/0228 (2013.01); H01L 21/02274 (2013.01); H01J 37/32724 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/332 (2013.01);
Abstract

A deposition method for embedding a SiN film in a recessed pattern formed on a surface of a substrate includes: (a) activating and supplying a first process gas containing NHto the surface of the substrate and causing NHgroups to adsorb on the surface of the substrate, where x is 1 or 2; (b) supplying a silicon-containing gas to the surface of the substrate on which the NHgroups are adsorbed and causing the silicon-containing gas to adsorb on the NHgroups; and (c) activating and supplying a second process gas containing Nto the surface of the substrate on which the NHgroups are adsorbed and partly replacing the NHgroups with N groups, wherein (a) and (b) are repeated, and (c) is performed every time (a) and (b) are repeated a predetermined number of times.


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