The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Dec. 14, 2021
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Jagar Singh, Clifton Park, NY (US);
Alexander M. Derrickson, Saratoga Springs, NY (US);
Alexander Martin, Greenfield Center, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/735 (2013.01); H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/42304 (2013.01); H01L 29/456 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region composed of semiconductor material; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and an extrinsic base contact wrapping around the semiconductor material of the extrinsic base region.