The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

May. 26, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Zheng-Jun Lin, Taichung, TW;

Chung-Cheng Chou, Hsinchu, TW;

Pei-Ling Tseng, Miaoli County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 7/06 (2006.01); G11C 7/08 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 7/065 (2013.01); G11C 7/08 (2013.01); G11C 7/12 (2013.01); G11C 2013/0042 (2013.01);
Abstract

A memory device includes a memory cell and a sense amplifier. The sense amplifier has a reference circuit configured to output a reference voltage and a sensing circuit connected to the memory cell. A comparator includes a first input and a second input, with the first input connected to the reference circuit to receive the reference voltage, and the second input connected to the memory cell. A precharger is configured to selectively precharge the sensing circuit to a predetermined precharge voltage.


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