The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Dec. 14, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Hiroki Takahashi, Tokyo, JP;
Toru Ishikawa, Kanagawa, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4091 (2006.01); G11C 11/406 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 11/406 (2013.01);
Abstract
Apparatuses and methods for 1T and 2T memory cell architectures. A memory array includes a word line which has both 1T and 2T portions. In the 1T portion, each sense amplifier is coupled to one memory cell along the word line. In the 2T portion, sense amplifiers are coupled to more than one memory cell along the word line each. For example, each sense amplifier in the 2T portion may be coupled to two bit lines, each of which intersect a memory cell along the word line. In some embodiments, the 2T portion may store a count value which represents an access count to the word line.