The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Feb. 03, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Giuseppe Cariello, Boise, ID (US);
Fulvio Rori, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0652 (2013.01); G06F 3/0619 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01);
Abstract
Apparatus and methods are disclosed, including receiving an indication to selectively erase first data stored on a first page of a first subset of a group of multi-level memory cells of the storage system, each multi-level memory cell comprising multiple pages and providing, in response the indication to selectively erase the first data, at least one soft erase pulse to the first page of memory cells associated with the first data to induce distribution overlap across different bit levels of the first page of the group of multi-level memory cell.