The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Jul. 30, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a first dielectric layer, a second dielectric layer and a memory device. The second dielectric layer includes a first layer and a second layer. The memory device includes a first conductive structure under the first dielectric layer, a second conductive structure over the second dielectric layer, and a memory cell between the first and the second dielectric layers. The memory cell includes a bottom electrode via, a bottom electrode over the bottom electrode via, a top electrode over the bottom electrode, a top electrode via over the top electrode, and a MTJ between the top electrode and the bottom electrode. The second layer of the second dielectric layer surrounds sidewalls of the top electrode via entirely. The first layer of the second dielectric layer surrounds sidewalls of the bottom electrode entirely, sidewalls of the MTJ entirely, and sidewalls of the top electrode entirely.