The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Mar. 06, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Zi-Ang Su, Taoyuan County, TW;

Chih Chieh Yeh, Taipei, TW;

Ming-Shuan Li, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/73 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 29/0649 (2013.01); H01L 29/7308 (2013.01); H01L 29/1004 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01);
Abstract

The present disclosure provides embodiments of bipolar junction transistor (BJT) structures. A BJT according to the present disclosure includes a first epitaxial feature disposed over a well region, a second epitaxial feature disposed over the well region, a vertical stack of channel members each extending lengthwise between the first epitaxial feature and the second epitaxial feature, a gate structure wrapping around each of the vertical stack of channel members, a first electrode coupled to the well region, an emitter electrode disposed over and coupled to the first epitaxial feature, and a second electrode disposed over and coupled to the second epitaxial feature.


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