The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Mar. 02, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Akira Yoshioka, Yokohama Kanagawa, JP;
Yasuhiro Isobe, Ota Tokyo, JP;
Hung Hung, Kawasaki Kanagawa, JP;
Hitoshi Kobayashi, Yamato Kanagawa, JP;
Tetsuya Ohno, Yokohama Kanagawa, JP;
Toru Sugiyama, Musashino Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes first and second nitride semiconductor layers. The second layer on the first nitride has a first region, a second region, and a third region between the first and second regions. A first gate electrode is in the first region and extends parallel to a surface of a substrate. A first source electrode is in the first region and extends in the first direction. A second gate electrode in the second region and extends in the first direction. A second source electrode is in the second region and extends in the first direction. A drain electrode coupled to a first and a second wiring. The first wiring directly contacts the second nitride semiconductor layer in the first region. The second wiring directly contacts the second nitride semiconductor layer in the second region. An insulation material is in the third region.