The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Oct. 28, 2020
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
Anbang Zhang, Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a doped group III-V semiconductor layer and a gate layer. The first nitride semiconductor layer has a first surface. The second nitride semiconductor layer is formed on the first surface of the first nitride semiconductor layer and has a greater bandgap than that of the first nitride semiconductor layer. The doped group III-V semiconductor layer is over the second nitride semiconductor layer. The doped group III-V semiconductor layer includes a first portion and a second portion having different thicknesses. The gate layer is disposed on the first portion and the second portion of the doped group III-V semiconductor layer.