The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Aug. 14, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Lei Wei, Boise, ID (US);
Adam Thomas Barton, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); G11C 5/06 (2006.01); H01L 21/768 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); G11C 5/06 (2013.01); G11C 7/1078 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5386 (2013.01);
Abstract
Methods, systems, and devices for reduced resistivity for access lines in a memory array are described. A first metal layer may be formed above a via that is configured to couple an access line of a memory array with a corresponding driver. The first metal layer may be oxidized, and then a second metal layer may be formed above the oxidized first metal layer. One or more access lines of the memory device may be formed from the second metal layer, the oxidized first metal layer, or both.