The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Apr. 08, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Min-Chung Cheng, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/53257 (2013.01); H10B 12/0335 (2023.02); H10B 12/31 (2023.02);
Abstract

A semiconductor device includes a first dielectric layer disposed over a semiconductor substrate, and a conductive contact penetrating through the first dielectric layer. The semiconductor device also includes a T-shaped landing pad structure disposed over and in direct contact with the conductive contact. The T-shaped landing pad structure includes a lower landing pad and an upper landing pad disposed over the lower landing pad, and a width of the upper landing pad is greater than a width of the lower landing pad. The semiconductor device further includes a capacitor disposed over and in direct contact with the T-shaped landing pad structure, and a second dielectric layer disposed over the first dielectric layer and surrounding the T-shaped landing pad structure and the capacitor.


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