The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Apr. 06, 2021
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

You-Lung Yen, Taoyuan, TW;

Bernd Karl Appelt, Holly Springs, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01); H01L 21/56 (2006.01); H01Q 1/22 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/4857 (2013.01); H01L 21/56 (2013.01); H01L 23/49822 (2013.01); H01L 23/552 (2013.01); H01L 23/66 (2013.01); H01Q 1/2283 (2013.01); H01L 2223/6677 (2013.01);
Abstract

A semiconductor device package and method for manufacturing the same are provided. The semiconductor device package includes a dielectric layer, an electronic component, a first conductive layer, and a conductive element. The dielectric layer has a first surface and a second surface opposite to the first surface. The electronic component is embedded in the dielectric layer. The first conductive layer is embedded in the dielectric layer and adjacent to the first surface of the dielectric layer. The conductive element is disposed on the first surface of the dielectric layer and in contact with the first conductive layer.


Find Patent Forward Citations

Loading…