The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11830779 B1

Date of Patent:

Nov. 28, 2023

Filed:

Aug. 10, 2021

In-situ etch material selectivity detection system

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Keith Berding, San Jose, CA (US);

Blake Erickson, Gilroy, CA (US);

Soumendra Barman, San Jose, CA (US);

Zhaozhao Zhu, Milpitas, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Lowenstein Sandler LLP

Primary Examiner:

Stephanie P Duclair

Int. Cl.

CPC ...

H01L 21/66 (2006.01); H01L 21/3213 (2006.01); H01J 37/32 (2006.01);

U.S. Cl.

CPC ...

H01L 22/26 (2013.01); H01J 37/32963 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01J 2237/334 (2013.01);

Abstract

An article, apparatus, and method for detecting an etch material selectivity is provided. A device including a first layer and a second layer is placed in a processing chamber. The first layer includes a first sense material deposited on a first portion of the device and a second sense material deposited on a second portion of the device. The second layer deposited on the first layer includes an etch material. During an etch process based on an initial set of etch parameter settings, a first amount of time to etch the second layer at the first portion of the device and a second amount of time to etch the second layer at the second portion of the device are measured. A first etch rate and a second etch rate of the processing chamber is determined based on the measured first amount of time, the measured second amount of time, and a thickness of the second layer. A first selectivity of the first etch material and a second selectivity of the second etch material is determined based on the first etch rate and the second etch rate. An optimized set of etch parameter settings for subsequent etch processes is determined based on the determined selectivities.

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