Data lines in three-dimensional memory devices

Abstract

A variety of applications can include apparatus having a memory device with an array of vertical strings of memory cells for the memory device with data lines coupled to the vertical strings, where the data lines have been formed by a metal liner deposition process. In the metal liner deposition, a metal can be formed on a patterned dielectric region. The metal liner deposition process allows for construction of the height of the data lines to be well controlled with selection of a thickness for the dielectric region used in forming the metal liner. Use of a metal liner deposition provides a controlled mechanism to reduce data line capacitance by being able to select liner thickness in forming the data lines. The use of the dielectric region with the metal liner deposition can allow the fabrication of the data lines to avoid pitch double or pitch quad processes.