The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Jul. 27, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventor:
Hao-Ming Chang, Pingtung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 1/72 (2012.01); G03F 1/24 (2012.01); G03F 1/38 (2012.01);
U.S. Cl.
CPC ...
G03F 7/2004 (2013.01); G03F 1/72 (2013.01); G03F 1/24 (2013.01); G03F 1/38 (2013.01);
Abstract
The present disclosure provides a method for forming a semiconductor structure, including forming a photoresist layer over a wafer, exposing the photoresist layer with an actinic radiation by using an EUV photomask, wherein the EUV photomask includes a substrate, a reflective multi-layer stack over the substrate, an absorber layer over the reflective multi-layer stack, and a first patch layer proximal to the absorber layer.